3、参考文献：A comparative study on SiC thin films grown on both uncatalyzed and Ni catalyzed （催化）Si(100) substrates by thermal MOCVD using single molecular precursors
自制设备来制取SiC thin films
4、参考文献：Electrochemical properties of Si thin film prepared by pulsed laser（脉冲激光） deposition for lithium ion micro-batteries
利用excimer laser（准分子激光）轰击硅靶，沉积到基体上。可得到Strong adhesion and hight density of the thin film.具体实验参数见原文。
5、参考文献：Improvement of electrochemical performance of Si thin film anode
by rare-earth La PIII technique
利用磁控溅射的办法在Cu的表面沉积Si膜。实验具体参数详见原文。
6、参考文献：Properties of amorphous Si thin film anodes prepared by pulsed laser deposition
脉冲激光沉积Si膜
a-Si thin films were grown on stainless steel and Si substrates by PLD at a pressure about 105 mTorr at room temperature. A Si(0 0 1) wafer was used as the target. The target–substrate distance was kept at 40 mm and the deposition time was 30 min. A Lambda Physik KrF excimer laser beam (248 nm, 150–160 mJ/pulse) was used in the deposition with a repetition frequency of 10 Hz. LiCoO2 thin films were also grown on SS and Si substrates by PLD but in an oxygen partial pressure of 100 mTorr at a substrate temperature of 600 8C. The films deposited on SS substrates (0.785 cm2) were used for the measurements of microstructure and electrochemical properties, while films on Si substrates were used for estimation of thin film thickness and growth rate.
7、参考文献：SiC film formation from fluorosilane gas by plasma CVD
SiC films were prepared using a mixture of SiF4, H2, CH4 and Ar by plasma CVD.