2012年10月11日[置顶][原创]图片批量添加去除白边工具v1.1

2009年11月2日DLC薄膜过渡层制备的一些资料总结

1、参考文献:射频溅射Si膜的微结构与光学性质研究(宋学萍)

薄膜的制备
实验用JGP560Ⅰ型超高真空磁控溅射仪制备不同厚度的Si薄膜,膜厚由溅射时间控制。Si靶的纯度为99. 99%。镀膜前,所有用于制备Si膜的基片经过超声波清洗处理,真空烘干后置于干燥缸内备用。
当真空室本底真空度达到6. 0 ×10 - 4 Pa后,充入高纯Ar (99. 999% )作为溅射气体。溅射时工作气压为0. 7 Pa,溅射功率为60W,溅射时间分别为20、30、40、50和60 min。衬底温度为300 ℃。
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分类:材料科学  标签:过渡层  DLC  类金刚石  薄膜    网友评论0条  已浏览loading

2009年11月2日关于类金刚石(DLC)膜的一点东西

1、文章:Effect of surface treatment on the adhesion of DLC film on 316L stainless steel
      M.M. Morshed-----------Surface and Coatings Technology
样品制备:A neutral beam saddle field source (Microvac 1200DB, Ion Tech. Ltd.) was used to deposit DLC films from an acetylene precursor on implant quality 316L stainless steel substrates. Two different substrates in the form of round discs with diameter 25 mm and thickness 0.2 and 8 mm were used. Substrates were polished with emery paper of grit no. 1200 before final polishing with 0.25 mm diamond suspension. The substrates were then cleaned consecutively in 1-1-1 trichloroethane and acetone for 30 min each in an ultrasonic bath, in order to remove any organic residue. They were subsequently dried in air prior to conducting the experiments. The substrates were placed at 400 mm distance from the source in the chamber. The vacuum chamber was initially pumped down to <6 x10-7 mbar. During deposition, the acetylene (C2H2) gas was held at the same pressures as used during etching. The anode current in the source was kept constant at 1.0 A for both etching and deposition and the anode voltage varied in the range of 0.95–1.6 kV. It has been shown that the energy of the atoms in the neutral beam under these anode voltage conditions is approximately equal to the anode voltage when they leave the source. The deposition time was kept constant at 1 h.
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分类:材料科学  标签:类金刚石  DLC  薄膜    网友评论0条  已浏览loading

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